GIC－4117／HC1．7MV Tandetron上的MeV离子注入系统

利用通用离子公司（ＧＩＣ）的４１１７型１．７ＭＶＴａｎｄｅｔｒｏｎ离子束分析设备进行ＭｅＶ级离子注入。所注入的离子能量范围由５００ｋｅＶ到１０ＭｅＶ，离子的质量在２４０ｕ以下，某些元素的负离子束流强度在１５０μＡ以上。双向机械扫描技术可将离子均匀地注入样片。     

松软矿体有底柱高分段崩落法的改进方案

锦屏磷矿对其东山采区松软矿体所使用的分段崩落法做了集中快速采准施工、增加分段高度、实行水平或上向扇形深孔连续崩矿等改进,简化了采场结构,矿石损失率由原来的63％下降到改进后的20.34％,贫化率由23.92％下降到15.10％。     

α-戊(己)基肉桂醛的合成

采用聚乙二醇 ( PEG 2 0 0 )作相转移催化剂 ,用氢氧化钾醇水溶液代替氢氧化钾醇溶液合成了 α 戊 (己 )基肉桂醛 ,收率提高到 85%以上。用此工艺合成的产品纯度高 ,香气好 ,具有较高的工业实用价值。     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

棉铃宝高效液相色谱分析方法研究

本法采用同一色谱条件反相高效液相色谱法测定棉铃宝中甲基对硫磷和辛硫磷的含量，方法简单易行，具有较高的精密度和准确度，其回收率分析为甲基对硫磷９９．５９％，辛硫磷１０１．０％。     

NUMERICAL MODEL FOR DYNAMIC SIMULATION OF TRAFFIC FLOW

ＮＵＭＥＲＩＣＡＬＭＯＤＥＬＦＯＲＤＹＮＡＭＩＣＳＩＭＵＬＡＴＩＯＮＯＦＴＲＡＦＦＩＣＦＬＯＷＷｕＺｈｅｎｇ；ＺｅｎｇＬｉ－ｎｏｎｇ（ＤｅｐａｒｔｍｅｎｔＡｐｐｌｉｅｄＭｅｃｈａｎｉｃｓ，ＦｕｄａｎＵｎｉｖｅｒｓｉｔｙ，Ｓｈａｇｈａｉ２００４３３，Ｐ...     

微机对调制信号的包络解调

应用检相原理，可以提取有限长度调制信号和包络解调。通过改变Ａ／Ｄ转换器的位数，提高检相分辨率，它与检测对象的速度无关。这为提高检相分辨率展示了新的途径。     

应变In0.20 Ga0.80As／GaAs单量子阱结构的光谱研究

报道了用光致发光光谱，吸收光谱和光电流谱研究具有相同组伊阱宽，不同覆盖层厚度的应变Ｉｎ０．２０Ｇａ０．８０Ａｓ／ＧａＡｓ单量子阱结构的实验结果，结果理论计算，观察到ＧａＡｓ覆盖层厚度对单量子阱结构的材料质量，应力驰豫和发光淬灭机制的影响，确定了各样品应变值和导带不连续因子Ｑｃ，并讨论了这种结构发光机制。     

激光在材料中感生的瞬态光声波和光热波

研究了锁模激光在材料中产生频率达GHz的光声波和相应探测技术,用回波分析法无损坏测量了薄材料的厚度。研究了激光在材料中感生的光热波,热沉测量可用于解释材料的破坏机理。